This faster electron-hole recombination rate is explained by assuming that the N~+/ N built-in potential ( due to the N~+ surface layer) is reduced by UV-irradiation. 假设紫外辐射降低了由N~+表面层引起的内建电势,可解释较快的电子-空穴复合速率。
At higher pump densities the excitons dissociate, and the UV stimulated emission is dominated by an electron-hole plasma recombination process. 在高密度激发条件下,由于激子趋于离化,紫外受激发射主要由电子-空穴等离子体的辐射复合引起。
The enhancement of photocatalytic activity results from suppressing the excited electron-hole pair recombination. 这种光催化的增强主要是由于光生电子空穴对的复合被抑制的结果。
The numerical results show that with the increase of the height of quantum dat ( the barrier thickness), the exciton energy and electron-hole recombination rate are reduced and the quantum dot emission wavelength is increased. 结果表明,量子点高度LGaN、势垒层厚度LAlGaN的增加将导致激子结合能、电子空穴复合率的降低,耦合量子点发光波长的增加。
The electron expressway shortens electron transport route and decreases electron-hole recombination rate, which result in the decrease of electron transport resistance and the improvement of electron transport efficiency, and accordingly the improvement of FF and total efficiency. 4. 电子高速公路缩短了电子传输路径,降低了电子传输过程中载流子的复合几率,导致了膜内电子传输阻抗的减小和电子传输效率的提高。因而使电池填充因子和总能量转化效率获得了显著提高。
However, when reached to a certain thickness, the probability of electron-hole recombination increased, so the photocurrent decreased with the increase of thickness. 但达到一定厚度后,电子空穴复合的几率增加,光电流开始随膜厚的增大而逐渐减小。
To effectively improve the use of visible and reduce electron-hole recombination rate, great efforts have been made to modify of TiO2.In this work, La-TiO2 thin films were deposited by electron beam evaporation method. 为了有效的利用可见光区和降低电子空穴复合率,对Ti02薄膜的改性引起了广泛的研究兴趣。